Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

High temperature pulsed-gate robustness testing of SiC power MOSFETs

[Article] On-line Junction Temperature Estimation of SiC Power MOSFETs through On-state Voltage Mapping

This paper deals with real-time estimation of the junction temperature of SiC power MOSFETs. The junction temperature of one device of a 4-switch module is real-time estimated by measuring its current and on-state voltage VON at each switching period and entering the temperature look-up table of the device. The temperature model is preliminarily obtained in a dedicated commissioning session, wh...

Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress

We study the threshold voltage (Vth) instability of commercially available silicon carbide (SiC) power MOSFETs or prototypes from four different manufacturers under positive bias temperature stress (PBTS). A positive bias near Vth causes a threshold voltage shift of 0.7 mV per decade in time per nanometer oxide thickness in the temperature range between -50°C and 150°C. Recovery at +5 V after a...

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

High Temperature Modeling and Characterization of 6H SiC MOSFETs

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...